Quick Detail:
Silicon N Channel Power MOS FET Power Switching
Description:
Silicon N Channel Power MOS FET Power Switching
Applications:
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 3.6 mΩ typ. (at VGS = 10 V)
• Pb-free
Specifications:
|
part no. |
RJK0332DPB-00-J0 |
|
Manufacturer |
Renesas Technology Corp |
|
supply ability |
10000 |
|
datecode |
10+ |
|
package |
LFPAK |
|
remark |
new and original stock |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
SIERRA SUPERIOR ELECTRON LTD Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.
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