Quick Detail:
Silicon N Channel Power MOS FET Power Switching
Description:
Silicon N Channel Power MOS FET Power Switching
Applications:
• High speed switching
• Capable of 4.5V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 2.3 mΩ typ. (at VGS = 10 V)
Specifications:
|
Datasheets |
RJK0301DPB |
|
Product Photos |
SOT-669-5, SC-100, MO-235 |
|
Standard Package |
2,500 |
|
Category |
Discrete Semiconductor Products |
|
Family |
FETs - Single |
|
Series |
- |
|
Packaging |
Tape & Reel (TR) |
|
FET Type |
MOSFET N-Channel, Metal Oxide |
|
FET Feature |
Logic Level Gate |
|
Drain to Source Voltage (Vdss) |
30V |
|
Current - Continuous Drain (Id) @ 25° C |
60A |
|
Rds On (Max) @ Id, Vgs |
2.8 mOhm @ 30A, 10V |
|
Vgs(th) (Max) @ Id |
- |
|
Gate Charge (Qg) @ Vgs |
32nC @ 4.5V |
|
Input Capacitance (Ciss) @ Vds |
5000pF @ 10V |
|
Power - Max |
65W |
|
Mounting Type |
Surface Mount |
|
Package / Case |
SC-100, SOT-669 |
|
Supplier Device Package |
LFPAK |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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