Quick Detail:
MRF21085 - Motorola, Inc - RF Power Field Effect Transistors
Description:
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,
IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 23%
IM3 — -37.5 dBc
ACPR — -41 dBc
Applications:
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Specifications:
|
Datasheets |
MRF21085LSR3 |
|
Standard Package |
250 |
|
Category |
Discrete Semiconductor Products |
|
Family |
RF FETs |
|
Series |
- |
|
Packaging |
Tape & Reel (TR) |
|
Transistor Type |
LDMOS |
|
Frequency |
2.11GHz |
|
Gain |
13.6dB |
|
Voltage - Test |
28V |
|
Current Rating |
10µA |
|
Noise Figure |
- |
|
Current - Test |
1A |
|
Power - Output |
19W |
|
Voltage - Rated |
65V |
|
Package / Case |
NI-780S |
|
Supplier Device Package |
NI-780S |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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Tag:
MRF21085R3,MRF21085SR3,MRF21085LSR3