RF Power Transistors MRF21045LR3 - Motorola, Inc - RF Power Field Effect Transistors

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Description

Detailed Product Description

 

Quick Detail:

 

RF Power Field Effect Transistors

 

 

Description:

 

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications

 

 

Applications:

 

• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,

f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,  Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Output Power ó 10 Watts Avg.

Efficiency ó 23.5%

Gain ó 15 dB

IM3 ó -37.5 dBc

ACPR ó -41 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW  Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

 

 

Specifications:

 

Datasheets

MRF21045 Series

PCN Obsolescence

RF Devices 01/Jul/2010

Standard Package

250

Category

Discrete Semiconductor Products

Family

RF FETs

Series

-

Packaging

Tape & Reel (TR)

Transistor Type

LDMOS

Frequency

2.16GHz

Gain

15dB

Voltage - Test

28V

Current Rating

10µA

Noise Figure

-

Current - Test

500mA

Power - Output

10W

Voltage - Rated

65V

Package / Case

NI-400

Supplier Device Package

NI-400-240

 

 

Competitive Advantage:

 

Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .


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