Quick Detail:
MRF18060A - Motorola, Inc - RF POWER FIELD EFFECT TRANSISTORS
Description:
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
Applications:
• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
Specifications:
Datasheets | MRF18060A Series |
Standard Package | 250 |
Category | Discrete Semiconductor Products |
Family | RF FETs |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | LDMOS |
Frequency | 1.81GHz |
Gain | 13dB |
Voltage - Test | 26V |
Current Rating | 6µA |
Noise Figure | - |
Current - Test | 500mA |
Power - Output | 60W |
Voltage - Rated | 65V |
Package / Case | NI-780 |
Supplier Device Package | NI-780 |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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Tag:
MRF18060A,MRF18060AR3,MRF18060ALSR3,MRF18060ASR3