Quick Detail:
Power LDMOS transistor
Description:
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Applications:
„ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
‹ Average output power = 40 W
‹ Power gain = 20 dB
‹ Efficiency = 28.5 %
‹ ACPR = −39 dBc
„ Easy power control
„ Integrated ESD protection
„ Enhanced ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (700 MHz to 1000 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
Specifications:
|
part no. |
BLF6G10LS-200 |
|
Manufacturer |
PHILIPS |
|
supply ability |
10000 |
|
datecode |
10+ |
|
package |
SOT502A |
|
remark |
new and original stock |
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