RF Power Transistors BLF4G10S-120 - PHILIPS - UHF power LDMOS transistor

Detailed Product Description

Quick Detail:

 

UHF power LDMOS transistor

 

 

Description:

 

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

 

 

Applications:

 

â–  Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA:

â—† Load power = 48 W (AV)

â—† Gain = 19 dB (typ)

◆ Efficiency = 40 % (typ)

â—† ACPR400 = −61 dBc (typ)

â—† ACPR600 = −72 dBc (typ)

â—† EVMrms = 1.5 % (typ)

â–  Easy power control

â–  Excellent ruggedness

■ High efficiency

â–  Excellent thermal stability

â–  Designed for broadband operation (800 MHz to 1000 MHz)

â–  Internally matched for ease of use

 

 

Specifications:

 

part no.	BLF4G10S-120
Manufacturer	PHILIPS
supply ability	10000
datecode	10+
package	SOT502A
remark	new and original stock

 

 

 

Pls pay attention to the following when your are purchasing:

 

1. We will offer pictures to our customers first and arrange shipment immediately after they make a confirmation. To protect your interest, please make sure to carefully review the pictures to ensure that model, suffix, packaging, appearance, etc. can meet your requirements before our sales team effect shipment. We don’t accept any return of goods due to the above reasons of uncertainty.

2. We have the most direct supply channels with manufacturers, supplier agents working closely so as to reduce product circulation. We are strict with quality, inspection and testing as they our essential work. At the same time,we also provide thoughtful, multi-faceted and comprehensive after-sales service.

 

★For any information, please contact with our sales…