Quick Detail:
UHF power LDMOS transistor
Description:
Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange.
Applications:
• High power gain
• Easy power control
• Excellent ruggedness
• Designed for broadband operation (1.8 to 2 GHz)
• Internal input and output matching for high gain and efficiency
• Improved linearity at backoff levels.
Specifications:
|
part no. |
BLF1820E-70 |
|
Manufacturer |
PHILIPS |
|
supply ability |
10000 |
|
datecode |
10+ |
|
package |
SOT608A |
|
remark |
new and original stock |
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