NPN PNP Transistors MBRA160T3G - ON Semiconductor - Surface Mount Schottky Power Rectifier

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Description

Detailed Product Description

Quick Detail:

Surface Mount Schottky Power Rectifier


Description:

This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.


Applications:

ï‚· Small Compact Surface Mountable Package with J−Bent Leads
ï‚· Rectangular Package for Automated Handling
ï‚· Highly Stable Oxide Passivated Junction
ï‚· Very Low Forward Voltage Drop
ï‚· Guard−ring for Stress Protection
ï‚· AEC−Q101 Qualified and PPAP Capable
ï‚· NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
ï‚· All Packages are Pb−Free*


Specifications:

Datasheets

MBRA160T3G, NRVBA160T3G

Product Photos

DO-214AC,SMA_403D−02

Standard Package

5,000

Category

Discrete Semiconductor Products

Family

Diodes, Rectifiers - Single

Series

-

Packaging

Tape & Reel (TR)

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

510mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

200µA @ 60V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

DO-214AC, SMA

Supplier Device Package

SMA

Catalog Page

1203 (CN081 PDF)

Other Names

MBRA160T3GOSTR


Competitive Advantage:

Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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