NPN PNP Transistors IXSN35N120U1 - TOSHIBA - High Voltage IGBT with Diode

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Description

Detailed Product Description

 

Quick Detail:

 

High Voltage IGBT with Diode

 

 

Description:

 

VCES = 1200 V

IC25 = 70 A

VCE(sat) = 4 V

 

 

Applications:

 

● International standard package mini BLOC (ISOTOP) compatible

● Aluminium-nitride isolation

- high power dissipation

● Isolation voltage 3000 V~

● Low VCE(sat)

- for minimum on-state conduction losses

● Fast RecoveryEpitaxial Diode

- short trr and IRM

● Low collector-to-case capacitance(< 50 pF)

- reducesd RFI

● Low package inductance (< 10 nH)

- easy to drive and to protect

 

 

Specifications:

 

part no.

IXSN35N120U1

Manufacturer

TOSHIBA

supply ability

10000

datecode

10+

package

MODULE

remark

new and original stock

 

 

Competitive Advantage:

 

Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .


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