NPN PNP Transistors 1N6266 - Fairchild Semiconductor - GaAs INFRARED EMITTING DIODE

Detailed Product Description

Quick Detail:

 

GaAs INFRARED EMITTING DIODE

 

Description:

•  
• The 1N6266 is a 940 nm LED in a narrow angle, TO-46 package.
• 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
• 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
• 3. RMA flux is recommended.
• 4. Methanol or isopropyl alcohols are recommended as cleaning
• agents.
• 5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
• 6. As long as leads are not under any stress or spring tension

 

Applications:

 

LED

 

 

Specifications:

 

Datasheets	1N6266
Product Photos	Infrared photo fig. 3
Standard Package	500
Category	Optoelectronics
Family	Infrared, UV Emitters
Series	-
Packaging	-
Current - DC Forward (If)	100mA
Radiant Intensity (Ie) Min @ If	25mW/sr @ 100mA
Wavelength	940nm
Voltage - Forward (Vf) Typ	1.7V
Viewing Angle	20°
Orientation	Top View
Mounting Type	Through Hole
Package / Case	TO-46-2 Lens Top Metal Can
Other Names	1N6266GE 1N6266QT 1N6266QT-ND IN6266

 

 

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Warranty :180days for all goods

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Tag:

1N6266GE  1N6266QT  1N6266QT-ND  IN6266