Quick Detail:
MRF9080LR3 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
Description:
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of these devices make them ideal for large−signal, common−
source amplifier applications in 26 volt base station equipment.
Applications:
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
Specifications:
Datasheets | MRF9080 Series |
Standard Package | 250 |
Category | Discrete Semiconductor Products |
Family | RF FETs |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | LDMOS |
Frequency | 960MHz |
Gain | 18.5dB |
Voltage - Test | 26V |
Current Rating | 10µA |
Noise Figure | - |
Current - Test | 600mA |
Power - Output | 75W |
Voltage - Rated | 65V |
Package / Case | NI-780 |
Supplier Device Package | NI-780 |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
SIERRA SUPERIOR ELECTRON LTD Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.
SIERRA SUPERIOR ELECTRON LTD Electronics has established a well-developed logistics system and global logistics network, which can guarantee our service very quick, convenient and efficient.
Tag:
MRF9080LSR3