MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Description

Detailed Product Description

Quick Detail:

 

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

 

 

Description:

 

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz

 

 

Applications:

 

· Low Noise - 2.5 dB @ 500 MHZ

· High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz

· Ftau - 5.0 GHz @ 10v, 75mA

· Cost Effective MacroX Package

 

 

Specifications:

Datasheets

MRF581(A,G,AG)

Product Photos

MRF581A

Catalog Drawings

MRF5(5,8)x(A,G) Top
MRF5(5,8)x(A,G) Side

Standard Package

500

Category

Discrete Semiconductor Products

Family

RF Transistors (BJT)

Series

-

Packaging

Bulk

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

5GHz

Noise Figure (dB Typ @ f)

3dB ~ 3.5dB @ 500MHz

Gain

13dB ~ 15.5dB

Power - Max

1.25W

DC Current Gain (hFE) (Min) @ Ic, Vce

90 @ 50mA, 5V

Current - Collector (Ic) (Max)

200mA

Mounting Type

Surface Mount

Package / Case

Micro-X ceramic (84C)

Supplier Device Package

Micro-X ceramic (84C)

Other Names

MRF581AMI
MRF581AMI-ND

 

 

Competitive Advantage:

 

Warranty :180days for all goods

Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

SIERRA SUPERIOR ELECTRON LTD Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.

SIERRA SUPERIOR ELECTRON LTD Electronics has established a well-developed logistics system and global logistics network, which can guarantee our service very quick, convenient and efficient.

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