Quick Detail:
MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Description:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz..
Low Noise - 2.5 dB @ 500 MHZ
High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
Applications:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
Specifications:
Datasheets | MRF581(A,G,AG) |
Product Photos | PowerMacro Pkg |
Catalog Drawings | MRF5(5,8)x(A,G) Top |
Standard Package | 500 |
Category | Discrete Semiconductor Products |
Family | RF Transistors (BJT) |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 18V |
Frequency - Transition | 5GHz |
Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
Gain | 13dB ~ 15.5dB |
Power - Max | 1.25W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 200mA |
Mounting Type | Surface Mount |
Package / Case | Micro-X ceramic (84C) |
Supplier Device Package | Micro-X ceramic (84C) |
Other Names | MRF581MI |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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Tag:
MRF581A