MRF19030LR3- Motorola, Inc - The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancem

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Detailed Product Description

MRF19030LR3- Motorola, Inc - The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs


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MRF19030LR3- Motorola, Inc - The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Description:

Designed for class AB PCN and PCS base station applications with
frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.


Applications:

• CDMA Performance @ 1990 MHz, 26 Volts
IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — -47 dBc @ 30 kHz BW
1.25 MHz — -55 dBc @ 12.5 kHz BW
2.25 MHz — -55 dBc @ 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel


Specifications:

Datasheets

MRF19030 Series

Standard Package

250

Category

Discrete Semiconductor Products

Family

RF FETs

Series

-

Packaging

Tape & Reel (TR)

Transistor Type

LDMOS

Frequency

1.96GHz

Gain

13dB

Voltage - Test

26V

Current Rating

1µA

Noise Figure

-

Current - Test

300mA

Power - Output

30W

Voltage - Rated

65V

Package / Case

NI-400

Supplier Device Package

NI-400



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Tag:
MRF19030LSR3

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