Quick Detail:
MRF19030LR3- Motorola, Inc - The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Description:
Designed for class AB PCN and PCS base station applications with
frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
Applications:
• CDMA Performance @ 1990 MHz, 26 Volts
IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — -47 dBc @ 30 kHz BW
1.25 MHz — -55 dBc @ 12.5 kHz BW
2.25 MHz — -55 dBc @ 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel
Specifications:
Datasheets | MRF19030 Series |
Standard Package | 250 |
Category | Discrete Semiconductor Products |
Family | RF FETs |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | LDMOS |
Frequency | 1.96GHz |
Gain | 13dB |
Voltage - Test | 26V |
Current Rating | 1µA |
Noise Figure | - |
Current - Test | 300mA |
Power - Output | 30W |
Voltage - Rated | 65V |
Package / Case | NI-400 |
Supplier Device Package | NI-400 |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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Tag:
MRF19030LSR3