MRF18090A - Motorola, Inc - 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS

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MRF18090A - Motorola, Inc - 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS
Description:

Designed for GSM and EDGE base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.


Applications:

• GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 52% (Typ) @ 90 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters


Specifications:

Datasheets

MRF18090A Series

Standard Package

250

Category

Discrete Semiconductor Products

Family

RF FETs

Series

-

Packaging

Tape & Reel (TR)

Transistor Type

LDMOS

Frequency

1.81GHz

Gain

13.5dB

Voltage - Test

26V

Current Rating

10µA

Noise Figure

-

Current - Test

750mA

Power - Output

90W

Voltage - Rated

65V

Package / Case

NI-880

Supplier Device Package

NI-880



Competitive Advantage:

Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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MRF18090AS

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