Quick Detail:
MRF18090A - Motorola, Inc - 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS
Description:
Designed for GSM and EDGE base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
Applications:
• GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 52% (Typ) @ 90 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
Specifications:
Datasheets | MRF18090A Series |
Standard Package | 250 |
Category | Discrete Semiconductor Products |
Family | RF FETs |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | LDMOS |
Frequency | 1.81GHz |
Gain | 13.5dB |
Voltage - Test | 26V |
Current Rating | 10µA |
Noise Figure | - |
Current - Test | 750mA |
Power - Output | 90W |
Voltage - Rated | 65V |
Package / Case | NI-880 |
Supplier Device Package | NI-880 |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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MRF18090AS