K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA



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4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA





The K4M561633G is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,

fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst length and programmable latencies allow the same device

to be useful for a variety of high bandwidth, high performance

memory system applications.





• 3.0V & 3.3V power supply.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

 -. CAS latency (1, 2 & 3).

 -. Burst length (1, 2, 4, 8 & Full page).

 -. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system


• Burst read single-bit write operation.

• Special Function Support.

 -. PASR (Partial Array Self Refresh).

 -. Internal TCSR (Temperature Compensated Self Refresh)

 -. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).





part no.



Samsung semiconductor

supply ability





54Balls FBGA


new and original stock



Competitive Advantage:


Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .

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