Integrated Circuit Chip SI3900DV-T1-E3 --- Dual N-Channel 20-V (D-S) MOSFET

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Description

Detailed Product Description

 

Quick Detail:

 

Dual N-Channel 20-V (D-S) MOSFET

 

 

Specifications:

 

Datasheets

SI3900DV

Product Photos

Pkg 5540

Standard Package

3,000

Category

Discrete Semiconductor Products

Family

FETs - Arrays

Series

TrenchFET®

Packaging

Tape & Reel (TR)

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25° C

2A

Rds On (Max) @ Id, Vgs

125 mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) @ Vgs

4nC @ 4.5V

Input Capacitance (Ciss) @ Vds

-

Power - Max

830mW

Mounting Type

Surface Mount

Package / Case

6-TSOP (0.065", 1.65mm Width)

Supplier Device Package

6-TSOP

Dynamic Catalog

N-Channel Logic Level Gate FETs

Other Names

SI3900DV-T1-E3TR
SI3900DVT1E3

 

 

Competitive Advantage:

 

Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .


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