Integrated Circuit Chip HM62V8512CLTT-5 - Hitachi Semiconductor - 4 M SRAM (512-kword x 8-bit)



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4 M SRAM (512-kword x 8-bit)





The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512C is suitable for battery backup system.





• Single 3.0 V supply: 2.7 V to 3.6 V

• Access time: 55/70 ns (max)

• Power dissipation

Active: 6.0 mW/MHz (typ)

Standby: 2.4 µW (typ)

• Completely static memory. No clock or timing strobe required

• Equal access and cycle times

• Common data input and output: Three state output

• Directly LV-TTL compatible: All inputs

• Battery backup operation





part no.



Hitachi Semiconductor

supply ability







new and original stock



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(goods weight below 3Kg) ,during 20130901-20130930 .

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