Quick Detail:
General purpose (dual digital transistors)
Specifications:
Datasheets |
EMD3, UMD3N, IMD3A |
Product Photos |
EMT6_EMT6 PKg |
Catalog Drawings |
EMT-6 Package Top |
Standard Package |
8,000 |
Category |
Discrete Semiconductor Products |
Family |
Transistors (BJT) - Arrays, Pre-Biased |
Series |
- |
Packaging |
Tape & Reel (TR) |
Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) (Ohms) |
10k |
Resistor - Emitter Base (R2) (Ohms) |
10k |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) |
500nA |
Frequency - Transition |
250MHz |
Power - Max |
150mW |
Mounting Type |
Surface Mount |
Package / Case |
SOT-563, SOT-666 |
Supplier Device Package |
EMT6 |
Dynamic Catalog |
NPN,PNP Pre-Biased Transistor Arrays |
Other Names |
EMD3T2R-ND |
Competitive Advantage:
Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .