Quick Detail:
< High-power GaAs FET (small signal gain stage)>
Description:
The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
Applications:
ï‚· Class A operation
ï‚· High output power
P1dB=37.0dBm(TYP.) @f=2.3GHz
ï‚· High power gain
GLP=11.0dB(TYP.) @f=2.3GHz
ï‚· High power added efficiency
P.A.E =40%(TYP.) @f=2.3GHz,P1dB
ï‚· Hermetically sealed metal-ceramic package with ceramic lid
Specifications:
|
part no. |
MGF0906B |
|
Manufacturer |
TOSHIBA |
|
supply ability |
10000 |
|
datecode |
10+ |
|
package |
RF |
|
remark |
new and original stock |
Competitive Advantage:
Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .
Why buy from us >>> Fast / Safely / Conveniently
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