Quick Detail:
HI-FREQUENCY PACKAGED PHEMT
Description:
The FPD6836P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD6836 is also available in die form .
Typical applications include gain blocks and medium power stages for applications to 22 GHz.
Applications:
♦ 22 dBm Output Power (P1dB)
♦ 19 dB Power Gain (G1dB) at 1.85 GHz
♦ 0.5 dB Noise Figure at 1.85 GHz
♦ 32 dBm Output IP3
♦ 50% Power-Added Efficiency at 1.85 GHz
♦ Useable Gain to 20 GHz
♦ Evaluation Boards Available
Specifications:
|
part no. |
FPD6836P70 |
|
Manufacturer |
Filtronic Compound Semiconductors |
|
supply ability |
10000 |
|
datecode |
10+ |
|
package |
SOT343 |
|
remark |
new and original stock |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
SIERRA SUPERIOR ELECTRON LTD Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.
SIERRA SUPERIOR ELECTRON LTD Electronics has established a well-developed logistics system and global logistics network, which can guarantee our service very quick, convenient and efficient.