Quick Detail:
SWITCHMODE Series NPN Silicon Power Transistor
Description:
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.4 [1]s at IC = 25 A
Application:
This device is designed for high speed, high current, high power
applications.
Specifications:
Datasheets | BUV21 |
Product Photos | TO-3 Pkg |
Standard Package | 100 |
Category | Discrete Semiconductor Products |
Family | Transistors (BJT) - Single |
Series | SWITCHMODE™ |
Packaging | Tray |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 40A |
Voltage - Collector Emitter Breakdown (Max) | 200V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3A, 25A |
Current - Collector Cutoff (Max) | 3mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 12A, 2V |
Power - Max | 250W |
Frequency - Transition | 8MHz |
Mounting Type | Through Hole |
Package / Case | TO-204AE |
Supplier Device Package | TO-3 |
Dynamic Catalog | NPN Transistors |
Other Names | BUV21G-ND |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
SIERRA SUPERIOR ELECTRON LTD Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.
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Tag:
BUV21G BUV21 BUV21GOSOS
