2SC5195-T1-A ------ MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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Description

Detailed Product Description

Quick Detail:

 

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

 

 

Specifications:

Datasheets

NE688 Series

Product Photos

SOT-543

Standard Package

3,000

Category

Discrete Semiconductor Products

Family

RF Transistors (BJT)

Series

-

Packaging

Tape & Reel (TR)

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

6V

Frequency - Transition

5GHz

Noise Figure (dB Typ @ f)

1.7dB ~ 2.5dB @ 2GHz

Gain

-

Power - Max

125mW

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 3mA, 1V

Current - Collector (Ic) (Max)

100mA

Mounting Type

Surface Mount

Package / Case

SOT-523

Supplier Device Package

3-SuperMiniMold (19)

Dynamic Catalog

NPN RF Transistors

Other Names

2SC5195-T1-A
NE68819-ATR
NE68819T1A

 

Competitive Advantage:

 

Warranty :180days for all goods

Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

SIERRA SUPERIOR ELECTRON LTD Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.

SIERRA SUPERIOR ELECTRON LTD Electronics has established a well-developed logistics system and global logistics network, which can guarantee our service very quick, convenient and efficient.

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